c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . w w w w f f f f p13 p13 p13 p13 n50 n50 n50 n50 rev.a nov .2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 13a,500v, r ds(on) (max0.46 ? )@v gs =10v ? ultra-low gate charge(typical 43nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi s trench layout-based process.this technology improves the performances compared with standard parts from various sources. all of these power mosfets are designed for applications in switching regulators, switching convertors, motor and relay drivers, and drivers for high power bipolar switching transistors demanding high speed and low gate drive power. absolute maximum ratings symbol parameter value units v dss drain source voltage 500 v i d continuous drain current(@tc=25 ) 13 a continuous drain current(@tc=100 ) 8 a i dm drain current pulsed (note1) 52 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 845 mj e ar repetitive avalanche energy (note1) 5 mj dv/dt peak diode recovery dv /dt (note3) 3.5 v/ ns p d total power dissipation(@tc=25 ) 195 w derating factor above 25 1.56 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 0.64 /w r qcs thermal resistance , c ase-to-sink - 0.5 - /w r qja thermal resistance , junction-to -ambient - - 62 .5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p13 p13 p13 p13 n50 n50 n50 n50 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 500 v,v gs =0v - - 1 a v ds =400v,tc=125 10 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 500 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25 - 0.5 - v/ gate threshold voltage v gs(th) v ds =10v,i d =250 a 3 - 4 .5 v drain -source on resistance r ds(on) v gs =10v,i d = 6 . 5 a - 0.37 0.46 ? forward transconductance gfs v ds =50v,i d = 6.5 a - 15 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 1580 2055 pf reverse transfer capacitance c rss - 21 26 output capacitance c oss - 180 235 switching time rise time tr v dd = 250 v, i d = 13 a r g = 9.1 ? r d =31 ? (note4,5) - 25 60 ns turn-on time ton - 100 210 fall time tf - 130 270 turn-off time toff - 100 210 total gate charge(gate-source plus gate-drain) qg v dd =4 00 v, v gs =10v, i d = 13 a (note 4 ,5) - 43 56 nc gate-source charge qgs - 7.5 - gate-drain("miller") charge qgd - 18.5 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 13 a pulse drain reverse current i drp - - - 52 a forward voltage(diode) v dsf i dr = 13 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 13 a,v gs =0v, di dr / dt =100 a / s - 442 633 ns reverse recovery charge qrr - 2.16 3.24 c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 500u h i as = 13 a,v dd =50v,r g =0 ? ,starting t j =25 3.i sd 13 a,di/dt 3 00a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p13 p13 p13 p13 n50 n50 n50 n50 3 / 7 please handle with caution fig.1 on state characteristics fig.2 transfer characteristics fig.3 capacitance variation vs drain voltage fig.4 maximum avalanche energy vs on-state current fig.5 on-resistance variation vs junction temperature fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p13 p13 p13 p13 n50 n50 n50 n50 4 / 7 fig.7 maximum safe operation area fig.8 maximum drain current vs case temperature fig.9 transient thermal response curve
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p13 p13 p13 p13 n50 n50 n50 n50 5 / 7 fig.10 gate test circuit & waveform fig.11 resistive switching test circuit & waveform fig.12 unclamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p13 p13 p13 p13 n50 n50 n50 n50 6 / 7 fig.13 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w f f f f p13 p13 p13 p13 n50 n50 n50 n50 7 / 7 to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm
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